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Preliminary Technical Information
Depletion Mode MOSFET
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
VDSX ID(on)
RDS(on)
= >
500V 6A 500m
N-Channel
TO-263 AA (IXTA)
G S D (Tab)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C
Maximum Ratings 500 20 30 300 - 55 ... +150 150 - 55 ... +150 V V V W C C C C C Nm/lb.in. g g g
G D G DS D (Tab)
TO-220AB (IXTP)
TO-247 (IXTH)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247
300 260 1.13 / 10 2.5 3.0 6.0
S
D (Tab) D = Drain Tab = Drain
G = Gate S = Source
Features * Normally ON Mode * International Standard Packages * Molding Epoxies Meet UL 94 V-0 Flammability Classification V - 4.0 V Advantages * Easy to Mount * Space Savings * High Power Density Applications * * * * * * Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250A VDS = 25V, ID = 250A VGS = 20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 3A, Note 1 VGS = 0V, VDS = 25V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 500 - 2.0
100 nA 5 A 50 A 500 m 6 A
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100177A(12/09)
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 TO-247 VGS = 5V, VDS = 250V, ID = 3A Resistive Switching Times VGS = 5V, VDS = 250V, ID = 3A RG = 2.4 (External) VGS = -10V, VDS = 25V, f = 1MHz VDS = 30V, ID = 3A, Note 1 Characteristic Values Min. Typ. Max. 2.8 4.5 2800 255 64 28 72 82 43 96 11 48 0.50 0.21 S pF pF pF ns ns ns ns nC nC nC 0.41 C/W C/W C/W
Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain
TO-220 (IXTP) Outline
Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 400V, ID = 0.45A, TC = 75C, Tp = 5s Characteristic Values Min. Typ. Max. 180 W TO-247 (IXTH) AD Outline Characteristic Values Min. Typ. Max. 0.8 350 16 2.8 1.3 V ns A C
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD trr IRM QRM IF = 6A, VGS = -10V, Note 1 IF = 3A, -di/dt = 100A/s VR = 100V, VGS = -10V
Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 (IXTA) Outline Dim.
A b b2 c c2 D D1 E 1. 2. 3. 4. Gate Drain Source Drain E1 e L L1 L2 L3
Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78
Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070
1 = Gate 2 = Drain 3 = Source
6.22 2.54 14.61 2.29 1.02 1.27
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
Fig. 1. Output Characteristics @ T J = 25C
6 VGS = 5V 3V 2V 1V 40 35 30
Fig. 2. Extended Output Characteristics @ T J = 25C
VGS = 5V 4V 3V
5
4
ID - Amperes
0V 3 -1V
ID - Amperes
25 20
2V
1V 15 10 0V
2
1 -2V 0 0.0 0.5 1.0 1.5 2.0 2.5
5 0 0 5 10 15
-1V -2V 20 25 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
6 VGS = 5V 2V 1V
1E+00
Fig. 4. Drain Current @ T J = 25C
VGS = - 2.25V
1E-01
5
- 2.50V - 2.75V
4
0V
1E-02
ID - Amperes
ID - Amperes
- 3.00V - 3.25V
3
-1V
1E-03
2
1E-04
- 3.50V
1
-2V
1E-05
- 3.75V
0 0 1 2 3 4 5
1E-06
0
100
200
300
400
500
600
VDS - Volts
VDS - Volts
Fig. 5. Drain Current @ T J = 100C
1.E+00 1.E+09
Fig. 6. Dynamic Output Resistance vs. Gate Voltage
VDS = 350V - 100V
1.E+08
VGS = -2.50V
1.E-01
-2.75V -3.00V
1.E+07
ID - Amperes
R O - Ohms
1.E-02
-3.25V -3.50V
1.E+06
TJ = 25C
1.E-03
-3.75V
1.E-04
1.E+05
TJ = 100C
-4.00V
1.E+04
1.E-05
1.E+03
0
100
200
300
400
500
600
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
-2.6
-2.4
-2.2
-2.0
VDS - Volts
VGS - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6 VGS= 0V 2.2 I D = 3A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.6 0.5 0.2 -50 -25 0 25 50 75 100 125 150 0.0 0 2 4 6 8 10 12 14 16 18 20 TJ = 25C TJ = 125C VGS = 0V 5V - - - -
Fig. 8. RDS(on) Normalized to ID = 3A Value vs. Drain Current
R DS(on) - Normalized
1.8
1.4
1.0
TJ - Degrees Centigrade
R DS(on) - Normalized
ID - Amperes
Fig. 9. Input Admittance
20 18 16 14 12 10 8 6 4 2 0 -3.5 0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0 2 4 TJ = 125C 25C - 40C VDS= 30V 10 12 VDS= 30V
Fig. 10. Transconductance
g f s - Siemens
8
ID - Amperes
6
TJ = - 40C 25C 125C
4
2
6
8
10
12
14
16
18
20
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature
1.3 18 16 VGS= -10V
Fig. 12. Forward Voltage Drop of Intrinsic Diode
BV / VGS(off) - Normalized
1.2
VGS(off) @ VDS = 25V
14 12
1.1 BVDSX @ VGS = - 5V 1.0
IS - Amperes
10 8 TJ = 125C 6 TJ = 25C
0.9
4 2
0.8 -50 -25 0 25 50 75 100 125 150
0 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA6N50D2 IXTP6N50D2 IXTH6N50D2
Fig. 13. Capacitance
10,000 5 4 3 VDS = 250V I D = 3A I G = 10mA
Fig. 14. Gate Charge
Capacitance - PicoFarads
Ciss
1,000
2
Coss
VGS - Volts
1 0 -1 -2
100
Crss
-3 -4 -5
f = 1 MHz
10 0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
70
80
90
100
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area @ T C = 25C
100.0 RDS(on) Limit 100s 10.0 10.0 100.0
Fig. 16. Forward-Bias Safe Operating Area @ T C = 75C
RDS(on) Limit 25s 100s
ID - Amperes
1ms 10ms 100ms TJ = 150C TC = 25C Single Pulse 0.1 10 100 1,000 DC
ID - Amperes
1ms 1.0 TJ = 150C TC = 75C Single Pulse 0.1 10 100 1,000
1.0
10ms 100ms DC
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
1.000
Z (th)JC - C / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_6N50D2(6C)8-13-09

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